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Professor

PROFILE

Full-time Professor

Radiation Science

Kim, Dong-Seok (김동석)

+82-54-750-5310

Current Position

2015 ~ present Senior/Principal Researcher, Korea Multi-purpose Accelerator Complex, KAERI
2026 ~ present Full-time Professor, Radiation Science, UST

Research Interest

- Space radiation effects in semiconductors/electronics
- Development of high reliability WBG semiconductors

Education

2008 B.S. Electrical Engineering and Computer Science, Kyungpook National University
2010 M.S. Electrical Engineering and Computer Science, Kyungpook National University
2015 Ph.D. Electronic Engineering, Kyungpook National University

Work Experience

Project

(On-going)
- Korea multi-purpose accelerator complex operation-Particle beam research support, ’24~’26.
- Advanced Infrastructure for Compound Semiconductor Devices in Space Defense Strategy, ’24~’28.
- Diamond-based Ultimate Semiconductors for Space & Extreme Environmental Applications, ’24~’30.

Publication

(International Journal, ’23~Present, *1st author or Corresponding author)
- Y. Nam, T. Kwak, S. Oh, G. Yoo, D.-S. Kim, S.-W. Kim, O. Nam, Gamma-ray radiation hardness of Ir contacts in H-terminated diamond MESFETs, Applied Physics Letters, Vol. 128, P. 173504, 2026.
- J. Lee, D.-S. Kim, S. Song, H. Kang, Impact of Gamma-Ray Irradiation on the Dynamic Switching Performance of 650-V Field Stop IGBTs: An Experimental and Simulation Study, IEEE Transactions on Electron Devices, Vol. 73, pp. 1499-1511, 2026.
- S. Kim, J. Kim, D.-S. Kim, H. Bae, M.-W. Ha, O. Seok, Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation, Journal of Semiconductors, Vol. 47, No. 1, P. 12501, 2026.
- H. Kim, J. Kim, S. Park, D. Lee, J. Byeon, J. Seo, D.-S. Kim*, Roy. B. Chung, Effects of Proton Radiation on Tin Oxide: Implications for Space Electronics, Advanced Electronic Materials, Vol. 11, No. 21, P. e00557, 2025.
- N-.Y. Choi, D.-S. Kim*, S.-U. Zhang, Design-Oriented Degradation Mapping and Hyperelastic Model-Switch Guidelines for Nitrile-Butadiene Rubber Seals, Polymers, Vol. 17, P. 2316, 2025.
- J. Kim, S.-H. Her, D.-S. Kim, B. Kim, S.-M. Jung, J. Kim, H. Hwang, K.-S. Kim, Y.-T. Kim, S.-Y. Choi, J. K. Kim, Stabilized Co Single-Atom Catalyst via Ion Implantation for Efficient Hydrogen Production, Small, Vol. 21, P. 2505383, 2025.
- M. Ryu, M. Suh, J. Ha, M. Bang, D. Lee, H. Lee, H. Sagong, D.-S. Km*, J. Kim, Soft Error in Saddle Fin-Based DRAM at Cryogenic Temperature, IEEE Access, Vol. 13, pp. 130603-130609, 2025.
- K. S. Lee, D.-S. Kim, E. K. Kim, A relation between yellow band and defect states of GaN epilayers during gamma-ray irradiation with different doses, Journal of the Korean Physical Society, Vol. 87, pp. 79-85, 2025.
- S. Song, S. Park, D.-S. Kim, H. Kang, Comparative Study of Proton and Gamma-Ray Radiation on the Threshold Voltage Shifts and the Reverse Recovery of Superjunction MOSFETs, IEEE Transactions on Electron Devices, Vol. 72, pp. 2454-2460, 2025.
- D.-H. Kim, D.-S. Kim, S.-U. Zhang, Classifying Radiation Degradation of Epoxy Molding Compound by Using Machine Learning and its Effect on Thermal and Mechanical Properties, Journal of Electrical Engineering & Technology, Vol. 20, pp. 1003-1014, 2025.
- J. Kim, S.-M. Jung, H. Im, H. Hwang, D.-S. Kim, G. W. Jeon, Y.-T. Kim, J. W. Han, J. K. Kim, Activating NiO nanorods array via nitrogen ion implantation for enhanced alkaline hydrogen evolution, Chemical Engineering Journal, Vol. 501, P. 157385, 2024.
- S. H. Shin, D.-K. Kim, S.-B. Bae, H.-S. Lee, J.-H. Lee, D.-S. Kim*, Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region, Solid-State Electronics, Vol. 220, P. 108987, 2024.
- S. H. Shin, D.-S. Kim*, J.-C. Woo, H. B. Lee, S.-H. Hahm, D.-K. Kim, Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV) Sensors, Transactions on Electrical and Electronic Materials, Vol. 25, pp. 512-518, 2024.
- S. Song, D.-S. Kim, H. Kang, Gamma Ray on Superjunction MOSFET and Gate Ringing, IEEE Transactions on Electron Devices, Vol. 71, pp. 4008-4014, 2024.
- C. Kim, H. Yoon, Y. Park, S. Kim, G. Kang, D.-S. Kim, O. Seok, The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation, Micromachines, Vol. 15, P. 496, 2024.
- C. Kim, H. Yoon, D.-S. Kim, O. Seok, Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation, Electronics, Vol. 13, P. 1352, 2024.
- D.-K. Kim, D.-S. Kim*, T.-E. Kim, M.-J. Kim, S. H. Shin, Investigation of low to high-dose gamma-ray radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT), Solid-State Electronics, Vol. 215, P. 108884, 2024.
- G. S. Adi, D.-S. Kim, I. Kwon, Simulation-based analysis of total ionizing dose effects on low noise amplifier for wireless communications, Nuclear Engineering and Technology, Vol. 56, pp. 568-574, 2024.
- J.-P. Shim, D.-S. Kim*, H. Jang, J.-W. Shin, D.-S. Park, D. Kim. C.-S. Shin, S. H. Shin, Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor, Japanese Journal of Applied Physics, Vol. 63, P. 020902, 2024.
- S.-J. Chang, D.-S. Kim*, T.-W. kim, Y. Bae, H.-W. Jung, I.-G. Choi, Y.-S. Noh, S.-H. Lee, S.-I. Kim, H.-K. Ahn, D.-M. Kang, J.-W. Lim, Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator, Nanomaterials, Vol. 13, P. 898, 2023.

Professional Activities

- (2012~present) (사)한국방사선산업학회 학술분과위원
- (2023~present) (사)대한전기학회 전기물성응용부문회 이사

Teaching Experiences

Honors and Awards

SNS/Homepage

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